Low carrier concentration crystals of the topological insulator Bi$_2$Te$_2$Se

Details Low carrier concentration crystals of the topological insulator Bi$_2$Te$_2$Se Low carrier concentration crystals of the topological insulator Bi$_2$Te$_2$Se

2011-12-07

arxiv.org/abs/1112.1648v1

Physics

Condensed Matter

Strongly Correlated Electrons

16 pages, 5 figures, accepted by PRB

Scientific paper

We report the characterization of Bi$_2$Te$_2$Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal growth techniques. X-ray diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity ($> 1 \mathrm{\Omega cm}$) and low carrier concentration ($\sim 5\times 10^{16}$/cm$^3$) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.

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