Long-range potential fluctuations and 1/f noise in hydrogenated amorphous silicon

Details Long-range potential fluctuations and 1/f noise in hydrogenated amorphous silicon Long-range potential fluctuations and 1/f noise in hydrogenated amorphous silicon

2002-10-30

arxiv.org/abs/cond-mat/0210680v2

Phys. Rev. B, Vol. 68, p. 125207 (2003)

Physics

Condensed Matter

Disordered Systems and Neural Networks

8 pages, 3 figures, several new parts and one new figure are added, but no conceptual revisions

Scientific paper

10.1103/PhysRevB.68.125207

We present a microscopic theory of the low-frequency voltage noise (known as "1/f" noise) in micrometer-thick films of hydrogenated amorphous silicon. This theory traces the noise back to the long-range fluctuations of the Coulomb potential produced by deep defects, thereby predicting the absolute noise intensity as a function of the distribution of defect activation energies. The predictions of this theory are in very good agreement with our own experiments in terms of both the absolute intensity and the temperature dependence of the noise spectra.

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