Long-lived spin memory in Mn-doped GaAs: Time resolved study

Details Long-lived spin memory in Mn-doped GaAs: Time resolved study Long-lived spin memory in Mn-doped GaAs: Time resolved study

2009-07-16

arxiv.org/abs/0907.2851v1

Physics

Condensed Matter

Materials Science

5 pages, 3 figures

Scientific paper

We study the electron spin dynamics in p-type GaAs doped with magnetic Mn acceptors by means of time-resolved pump-probe and photoluminescence techniques. Measurements in transverse magnetic fields show a long spin relaxation time of 20 ns that can be uniquely related to electrons. Application of weak longitudinal magnetic fields above 100 mT extends the spin relaxation times up to microseconds which is explained by suppression of the Bir-Aronov-Pikus spin relaxation for the electron on the Mn acceptor.

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