Localized States and Resultant Band Bending in Graphene Antidot Superlattices

Details Localized States and Resultant Band Bending in Graphene Antidot Superlattices Localized States and Resultant Band Bending in Graphene Antidot Superlattices

2011-02-25

arxiv.org/abs/1102.5135v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

NanoLetters, 2011

Scientific paper

10.1021/nl1042648

We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically back-gated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type doping. These findings are of great interest for light-harvesting applications that require field separation of electron-hole pairs.

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