Localization in Semiconductor Quantum Wire Nanostructures

Details Localization in Semiconductor Quantum Wire Nanostructures Localization in Semiconductor Quantum Wire Nanostructures

1995-01-24

arxiv.org/abs/cond-mat/9501113v1

Physics

Condensed Matter

4 pages, RevTeX 3.0, 5 figures (available upon request)

Scientific paper

10.1103/PhysRevB.51.13821

Localization properties of quasi-one dimensional quantum wire nanostructures are investigated using the transfer matrix-Lyapunov exponent technique. We calculate the localization length as a function of the effective mean-field mobility assuming the random disorder potential to be arising from dopant-induced short-range $\delta$-function or finite-range Gaussian impurity scattering. The localization length increases approximately linearly with the effective mobility, and is also enhanced by finite-range disorder. There is a sharp reduction in the localization length when the chemical potential crosses into the second subband.

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