Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices

Details Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices

2009-01-10

arxiv.org/abs/0901.1349v1

Phys. Rev. Lett. 102, 186803 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.102.186803

We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the LDT to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials for estimating the strength of disorder and exciton interaction.

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