Localization and interaction of indirect excitons in GaAs coupled quantum wells

Details Localization and interaction of indirect excitons in GaAs coupled quantum wells Localization and interaction of indirect excitons in GaAs coupled quantum wells

2008-04-30

arxiv.org/abs/0804.4886v1

Nano Lett., 2009, 9 (5), pp 2094-2098

Physics

Condensed Matter

Materials Science

Scientific paper

10.1021/nl900605b

We introduced an elevated trap technique and exploited it for lowering the effective temperature of indirect excitons. We observed narrow photoluminescence lines which correspond to the emission of individual states of indirect excitons in a disorder potential. We studied the effect of exciton-exciton interaction on the localized and delocalized exciton states and found that the homogeneous line broadening increases with density and dominates the linewidth at high densities.

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