Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Details Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

2010-11-10

arxiv.org/abs/1011.2356v1

Physics

Condensed Matter

Materials Science

submitted to Appl. Phys. Lett

Scientific paper

We report on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of interplay between spin-transport-related contribution and tunneling anisotropic magnetoresistance of magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ohm which is twice the magnitude of the measured non-local signal.

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