Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis

Details Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis

2007-11-20

arxiv.org/abs/0711.3188v2

Nanotechnology 19, 175202 (2008)

Physics

Condensed Matter

Materials Science

6 pages, 3 figures

Scientific paper

10.1088/0957-4484/19/17/175202

We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube from dichloroethane via AC dielectrophoresis (DEP) onto pre-patterned source and drain electrodes with a local aluminum gate in the middle. Local-gated CNT-FET devices display superior performance compared to global back gate with on-off ratios 10^4 and maximum subthreshold swings of 170 mV/dec. The local bottom-gated DEP assembled CNT-FETs will facilitate large scale fabrication of complementary metal-oxide-semiconductor (CMOS) compatible nanoelectronic devices.

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