Local Electrical Stress-Induced Doping and Formation of 2D Monolayer Graphene P-N Junction

Details Local Electrical Stress-Induced Doping and Formation of 2D Monolayer Graphene P-N Junction Local Electrical Stress-Induced Doping and Formation of 2D Monolayer Graphene P-N Junction

2011-03-23

arxiv.org/abs/1103.4568v3

Physics

Condensed Matter

Materials Science

12 pages, 4 figures

Scientific paper

We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as the electrical stressing level (voltage) increases. Two major physical mechanisms are proposed to interpret the observed phenomena: modifications of surface chemistry for N-type doping (at low-level stressing) and thermally-activated charge transfer from graphene to SiO2 substrate for P-type doping (at high-level stressing). The formation of P-N junction on 2D graphene monolayer is demonstrated with complementary doping based on locally applied electrical stressing.

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