Lithographic engineering of anisotropies in (Ga,Mn)As

Details Lithographic engineering of anisotropies in (Ga,Mn)As Lithographic engineering of anisotropies in (Ga,Mn)As

2006-12-17

arxiv.org/abs/cond-mat/0612439v1

Appl. Phys. Lett. 90, 102102 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.2710478

The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here we present a method which provides patterning induced anisotropy which not only can be applied locally, but also dominates over the intrinsic material anisotropy at all temperatures.

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