Limits on electron quality in suspended graphene due to flexural phonons

Details Limits on electron quality in suspended graphene due to flexural phonons Limits on electron quality in suspended graphene due to flexural phonons

2010-08-15

arxiv.org/abs/1008.2522v1

Phys. Rev. Lett. 105, 266601 (2010)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.105.266601

The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases quadratically with $T$. Flexural phonons limit the intrinsic mobility down to a few $\text{m}^2/\text{Vs}$ at room $T$. Their effect can be eliminated by applying strain or placing graphene on a substrate.

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