Limit of Field Effect Mobility on Pentacene Single Crystal

Details Limit of Field Effect Mobility on Pentacene Single Crystal Limit of Field Effect Mobility on Pentacene Single Crystal

2003-05-16

arxiv.org/abs/cond-mat/0305402v1

Applied Physics Letters, v.83, #23, pp. 4773-4775, December 8, 2003

Physics

Condensed Matter

9 pages, 3 figures. Sent to Applied Physics Letters

Scientific paper

10.1063/1.1631736

We report on fabrication and characterization of field effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room temperature effective mobility up to 0.30 cm2/Vs and on/off ratios up to 5*10^6. A negative gate voltage of -50V significantly decreases the activation energy (Ea) down to 0.143 eV near room temperature. Assuming thermal equilibrium between trapped and free carriers, from Ea = 0.143eV, we find the number of free carriers is only 0.4% of the total number of injected carriers. Along with effective mobility ~ 0.3 cm2/Vs this gives the intrinsic free carrier mobility of ~75 cm2/Vs.

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