Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2010-08-08
Physical Review Letters 107, 136602 (2011)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
4 pages, 4 figures. (The current version (v3) is the result of splitting up the previous version (v2), and has been completely
Scientific paper
10.1103/PhysRevLett.107.136602
We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) configurations, offering an additional current path. By employing a detailed temperature dependence study in combination with a rate equation model, we estimate the lifetime of this particular state to exceed 48 ns. The two-electron spin-valley configurations of all relevant confined quantum states in our device were obtained by a large-scale atomistic tight-binding simulation. The LET acts as a signature of the complicated valley physics in silicon; a feature that becomes increasingly important in silicon quantum devices.
Biesemans Serge
Collaert Nadine
Hollenberg Lloyd C. L.
Klimeck Gerhard
Lansbergen Gabriel P.
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