Level Set Approach to Reversible Epitaxial Growth

Details Level Set Approach to Reversible Epitaxial Growth Level Set Approach to Reversible Epitaxial Growth

2001-11-14

arxiv.org/abs/cond-mat/0111258v1

Physics

Condensed Matter

Materials Science

7 pages, 9 figures

Scientific paper

10.1103/PhysRevE.64.061602

We generalize the level set approach to model epitaxial growth to include thermal detachment of atoms from island edges. This means that islands do not always grow and island dissociation can occur. We make no assumptions about a critical nucleus. Excellent quantitative agreement is obtained with kinetic Monte Carlo simulations for island densities and island size distributions in the submonolayer regime.

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