Lead sulfide infrared detectors

Details Lead sulfide infrared detectors Lead sulfide infrared detectors

Dec 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.2021...98s&link_type=abstract

Proc. SPIE Vol. 2021, p. 98-106, Growth and Characterization of Materials for Infrared Detectors, Randolph E. Longshore; Jan W.

Physics

Scientific paper

The photosensitivity of lead chalcogenides in the IR region has been known for a long time. These detectors exhibit wide range of electrical characteristics. A cheap and easy chemical bath deposition process has been utilized to deposit PbS onto glass substrates. Well adherent nonporous `p' type PbS films of thickness 1 - 1.5 microns were obtained. These films, after heat treatment, showed a dark resistance of 0.5 - 1 M(Omega) with a high signal-to-noise ratio of 1000 with a D(superscript *) (800 degree(s)C, 500 Hz, 2 Hz) of 2.6 X 10(superscript 10) cm Hz(superscript 1/2) W(superscript -1).

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