Vapor phase epitaxy of ZnTe on silicon substrates

Details Vapor phase epitaxy of ZnTe on silicon substrates Vapor phase epitaxy of ZnTe on silicon substrates

Dec 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.2021..108b&link_type=abstract

Proc. SPIE Vol. 2021, p. 108-113, Growth and Characterization of Materials for Infrared Detectors, Randolph E. Longshore; Jan W.

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Scientific paper

We report for the first time the growth of high-quality ZnTe epilayers on silicon substrates by metal organic vapor phase epitaxy. ZnTe layers up to 7 mm thick were grown on (001) silicon substrates at 420 degree(s)C - 450 degree(s)C substrate temperatures. The layers were mirror shiny and smooth, devoid of growth features like layered or stepped structures. The x-ray double-crystal diffraction showed that best ZnTe layers exhibited full width at half maximum of 110 arc seconds. Further optimization of the growth procedure will make this material very useful for the potential development of low-cost IR focal plane arrays and other optoelectronic devices that use direct wide-band gap ZnTe.

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