Layer charge instability in unbalanced bilayer systems in the quantum Hall regime

Details Layer charge instability in unbalanced bilayer systems in the quantum Hall regime Layer charge instability in unbalanced bilayer systems in the quantum Hall regime

2003-06-05

arxiv.org/abs/cond-mat/0306146v1

Phys. Rev. B 68, 201308 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.68.201308

Measurements in GaAs hole bilayers with unequal layer densities reveal a pronounced magneto-resistance hysteresis at the magnetic field positions where either the majority or minority layer is at Landau level filling factor one. At a fixed field in the hysteretic regions, the resistance exhibits an unusual time dependence, consisting of random, bidirectional jumps followed by slow relaxations. These anomalies are apparently caused by instabilities in the charge distribution of the two layers.

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