Lattice Relaxation in Epitaxial BaTiO$_3$ Thin Films

Details Lattice Relaxation in Epitaxial BaTiO$_3$ Thin Films Lattice Relaxation in Epitaxial BaTiO$_3$ Thin Films

2005-11-21

arxiv.org/abs/cond-mat/0511518v1

Appl. Phys. Lett. 88, 152908 (2006)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1063/1.2194231

We have investigated the out-of-plane lattice relaxation related to the ferroelectric transitions in epitaxial BaTiO$_3$ (BTO) films using synchrotron X-ray diffraction. Under either compressive strain or tensile strain, there is evidence for two structural phase transitions as a function of temperature. The transition temperature $T_C$ is a strong function of strain, which can be as much as 100 K above the corresponding $T_C$ in bulk. Under compressive strain, the tetragonality of BTO unit cell implies that the polarization of the first ferroelectric phase is out-of-plane, while under tensile strain, the polarization is in-plane. The transitions at lower temperature may correspond to the $aa\to r$ or $c\to r$ transitions, following the notations by Pertsev \textit{et al}. The orientations of the domains are consistent with theoretical predictions.

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