Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide

Details Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide

2001-05-29

arxiv.org/abs/cond-mat/0105562v1

Physics

Condensed Matter

Materials Science

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Scientific paper

10.1063/1.1403238

We perform high resolution X-ray diffraction on GaMnAs mixed crystals as well as on GaMnAs/GaAs and GaAs/MnAs superlattices for samples grown by low temperature molecular beam epitaxy under different growth conditions. Although all samples are of high crystalline quality and show narrow rocking curve widths and pronounced finite thickness fringes, the lattice constant variation with increasing manganese concentration depends strongly on the growth conditions: For samples grown at substrate temperatures of 220 and 270 degrees C the extrapolated relaxed lattice constant of Zincblende MnAs is 0.590 nm and 0.598 nm respectively. This is in contrast to low temperature GaAs, for which the lattice constant decreases with increasing substrate temperature.

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