Laterally-doped heterostructures for III-N lasing devices

Details Laterally-doped heterostructures for III-N lasing devices Laterally-doped heterostructures for III-N lasing devices

2002-03-27

arxiv.org/abs/cond-mat/0203578v1

Physics

Condensed Matter

10 pages, 1 table, 2 figures (3 actually submitted)

Scientific paper

10.1063/1.1527985

To achieve a high-density electron-hole plasma in group-III nitrides for efficient light emission, we propose a planar two-dimensional (2D) p-i-n structure that can be created in selectively-doped superlattices and quantum wells. The 2D p-i-n structure is formed in the quantum well layers due to efficient activation of donors and acceptors in the laterally doped barriers. We show that strongly non-equilibrium 2D electron-hole plasma with density above $10^{12} cm^{-2}$ can be realized in the i-region of the laterally biased p-i-n structure, enabling the formation of interband population inversion and stimulated emission from such a LAteral Current pumped Emitter (LACE). We suggest that implementation of the lateral p-i-n structures provides an efficient way of utilizing potential-profile-enhanced doping of superlattices and quantum wells for electric pumping of nitride-based lasers.

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