Lateral superlattices as voltage-controlled traps for excitons

Details Lateral superlattices as voltage-controlled traps for excitons Lateral superlattices as voltage-controlled traps for excitons

1997-05-07

arxiv.org/abs/cond-mat/9705055v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

including 11 figures

Scientific paper

10.1103/PhysRevB.56.13414

We demonstrate the localisation of quantum well excitons in a periodic array of linear traps using photoluminescence experiments. The excitonic traps are induced by applying spatially alternating external voltages via interdigitated metal gates. The localisation originates from the periodical modulation of the strength of the quantum-confined Stark effect in the plane of the quantum well. In our experiments, the trap depth is easily tuned by the voltages applied to the interdigitated gates. Furthermore, we find that a perpendicular magnetic field reduces the exciton diffusion length. In short-period lateral superlattices, we observe a magnetic-field-induced stabilisation of excitons in the presence of strong in-plane electric fields.

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