Lateral optical anisotropy of type-II interfaces in the tight-binding approach

Details Lateral optical anisotropy of type-II interfaces in the tight-binding approach Lateral optical anisotropy of type-II interfaces in the tight-binding approach

2004-03-11

arxiv.org/abs/cond-mat/0403297v1

Phys. Rev. B 70, 235332 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 6 figures, submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.70.235332

We have developed the tight-binding theory to study electronic and optical properties of type-II heterostructures CA/C'A' grown from the zinc-blende semiconductors CA and C'A' along the crystallographic direction [001]. The sp^3s* nearest-neighbor tight-binding model with allowance for the spin-orbit interaction is used to calculate the energy states and the in-plane linear polarization of the spatially-indirect band-edge photoluminescence of InAs/AlSb and ZnSe/BeTe multi-layered structures. The interface parameters for a pair of the nonstandard planes C-A' or C'-A are considered as fitting variables. A wide range of these parameters are shown to allow Tamm-like hole states localized at the interfaces. The theory leads to giant values of the light polarization in the both type-II heterosystems in agreement with existing experimental findings.

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