Laser written junctionless dual in-plane-gate thin-film transistors with AND Logic function

Details Laser written junctionless dual in-plane-gate thin-film transistors with AND Logic function Laser written junctionless dual in-plane-gate thin-film transistors with AND Logic function

2012-04-11

arxiv.org/abs/1204.2312v1

Physics

Condensed Matter

Materials Science

Scientific paper

A simple laser scribing process has been developed to fabricate low-voltage junctionless in-plane-gate thin-film transistors (TFTs) arrays without any mask and photolithography. Such junctionless TFTs feature that the channel and the source/drain electrodes are of the same indium-tin-oxide films without any intentional source/drain junction deposition process. Effective field-effect modulation of the drain current has been realized on such in-plane-gate device with a field-effect mobility of ~12.6cm2/Vs. At last, AND gate logic function was demonstrated on dual in-plane-gate device.

Affiliated with

Also associated with

No associations

Rating

Laser written junctionless dual in-plane-gate thin-film transistors with AND Logic function does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Laser written junctionless dual in-plane-gate thin-film transistors with AND Logic function, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser written junctionless dual in-plane-gate thin-film transistors with AND Logic function will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-716752