Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions

Details Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions

2005-11-28

arxiv.org/abs/cond-mat/0511662v1

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 4 figures; submitted to Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.96.047203

Using low-temperature scanning laser microscopy we directly image electric transport in a magnetoresistive element, a manganite thin film intersected by a grain boundary (GB). Imaging at variable temperature allows reconstruction and comparison of the local resistance vs temperature for both, the manganite film and the GB. Imaging at low temperature also shows that the GB switches between different resistive states due to the formation and growth of magnetic domains along the GB. We observe different types of domain wall growth; in most cases a domain wall nucleates at one edge of the bridge and then proceeds towards the other edge.

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