Large two-level magnetoresistance effect in doped manganite grain boundary junctions

Details Large two-level magnetoresistance effect in doped manganite grain boundary junctions Large two-level magnetoresistance effect in doped manganite grain boundary junctions

2000-08-07

arxiv.org/abs/cond-mat/0008105v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures, to appear in Phys. Rev. B (Rapid Comm.)

Scientific paper

10.1103/PhysRevB.62.R9248

We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain boundary junctions formed in epitaxial La(2/3)Ca(1/3)MnO(3) films deposited on SrTiO(3) bicrystals. For magnetic fields H applied parallel to the grain boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The observed behavior is explained within a model of magnetic domain pinning at the grain boundary interface.

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