Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon

Details Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon

2005-08-05

arxiv.org/abs/cond-mat/0508159v1

Physics

Condensed Matter

Materials Science

16 pages, 4 figures, To be published in J. Magn. Magn. Mat

Scientific paper

10.1016/j.jmmm.2005.04.017

Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (001) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in-situ PLD grown through the step of high temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (100) substrate. The ferromagnetic transition temperature (TC ~ 215 K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ~15 degrees in the ferromagnetic state.

Affiliated with

Also associated with

No associations

Rating

Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-248831