Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique

Details Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique

2006-03-09

arxiv.org/abs/cond-mat/0603238v1

Physics

Condensed Matter

Materials Science

3 pages, 5 figures

Scientific paper

e have developed a simple process to obtain large magnetoresistance (MR) in perovskite manganite thin films by a combination of focused ion beam (FIB) milling and 120 keV H$_{2}^{+}$ ion implantation. Metal slits about 70 nm in width were printed by 30 kV focused Ga ion beam nanolithography on a 4 mm track, and the materials in these slits are then irradiated by the accelerated H$_{2}^{+}$ ions. Using this method, in a magnetic field of 5 T we can get a MR${>}$60% over a 230 K temperature scope, with a maximum value of 95% at around 70 K. This technique is very promising in terms of its simplicity and flexibility of fabrication and has potential for high-density integration.

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