Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors

Details Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors

2007-02-15

arxiv.org/abs/cond-mat/0702370v1

Physics

Condensed Matter

Other Condensed Matter

12 pages (including 4 figures). Accepted for publishing on APL

Scientific paper

We report on magnetotransport investigations of nano-scaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2K. Magnetotransport measurements carried out at 1.8K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which we interpret in terms of a switching mechanism driven by the shape anisotropy of the central wire-like Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which we tentatively attribute to excitation of magnons in the central island.

Affiliated with

Also associated with

No associations

Rating

Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-302582