Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor

Details Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor

2001-08-30

arxiv.org/abs/cond-mat/0108510v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 figures, submitted for publication

Scientific paper

10.1103/PhysRevLett.87.227203

A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the non-magnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the non-magnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.

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