Large low-frequency resistance noise in chemical vapor deposited graphene

Details Large low-frequency resistance noise in chemical vapor deposited graphene Large low-frequency resistance noise in chemical vapor deposited graphene

2010-06-08

arxiv.org/abs/1006.1600v3

Applied Physics Letter, 97, 133504, 2010

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1063/1.3493655

We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO$_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as $0.1 - 0.5$. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.

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