Large local Hall effect in pin-hole dominated multigraphene spin-valves

Details Large local Hall effect in pin-hole dominated multigraphene spin-valves Large local Hall effect in pin-hole dominated multigraphene spin-valves

2011-11-10

arxiv.org/abs/1111.2583v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during field sweeping similar to the signal observed due to spin-injection into multigraphene. The switching behavior has been explained in terms of local Hall effect at the pin-holes and thickness irregularity of the tunnel barrier. Local Hall effect appears due to large local magnetostatic field produced at the pin-holes in the AlOx tunnel barrier. The effect of this local Hall effect is found to reduce as temperature is increased above 75 K. The strong local Hall effect in multigraphene hinders spin-injection into multigraphene resulting in no spin signal in non-local measurements.

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