Large Gap Topological Insulator Bi2Te3 with a Single Dirac Cone on the Surface

Details Large Gap Topological Insulator Bi2Te3 with a Single Dirac Cone on the Surface Large Gap Topological Insulator Bi2Te3 with a Single Dirac Cone on the Surface

2009-04-12

arxiv.org/abs/0904.1829v1

Physics

Condensed Matter

Materials Science

Submitted for publication on March 03, 2009

Scientific paper

We investigate the surface state of Bi$_2$Te$_3$ using angle resolved photoemission spectroscopy (ARPES) and transport measurements. By scanning over the entire Brillouin zone (BZ), we demonstrate that the surface state consists of a single non-degenerate Dirac cone centered at the $\Gamma$ point. Furthermore, with appropriate hole (Sn) doping to counteract intrinsic n-type doping from vacancy and anti-site defects, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states, consistent with a carrier sign change near this doping in transport properties. Our experimental results establish for the first time that Bi$_2$Te$_3$ is a three dimensional topological insulator with a single Dirac cone on the surface, as predicted by a recent theory.

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