Large Bychkov-Rashba spin-orbit coupling in high-mobility GaN/AlGaN heterostructures

Details Large Bychkov-Rashba spin-orbit coupling in high-mobility GaN/AlGaN heterostructures Large Bychkov-Rashba spin-orbit coupling in high-mobility GaN/AlGaN heterostructures

2006-05-08

arxiv.org/abs/cond-mat/0605155v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Accepted for publication in PRB

Scientific paper

10.1103/PhysRevB.74.033302

We present low temperature magnetoconductivity measurements of a density-tunable and high mobility two-dimensional electron gas confined in the wide bandgap GaN/AlGaN system. We observed pronounced anti-localization minima in the low-field conductivity, indicating the presence of strong spin-orbit coupling. Density dependent measurements of magnetoconductivity indicate that the coupling is mainly due to the Bychkov-Rashba mechanism. In addition, we have derived a closed-form expression for the magnetoconductivity, allowing us to extract reliable transport parameters for our devices. The Rashba spin-orbit coupling constant is $\alpha_{so}$ $\sim$ 6$\times$ 10$^{-13}$eVm, while the conduction band spin-orbit splitting energy amounts to $\Delta_{so}$ $\sim$ 0.3meV at n$_e$=1$\times10^{16}$m$^{-2}$.

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