Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier

Details Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier

2010-10-05

arxiv.org/abs/1010.0902v1

Physics

Condensed Matter

Materials Science

4 pages, 5 figures

Scientific paper

All-oxide magnetic tunnel junctions (MTJs) incorporating functional materials as insulating barriers have the potential of becoming the founding technology for novel multi-functional devices. We investigate, by first-principles density functional theory, the bias-dependent transport properties of an all-oxide SrRuO3/BaTiO3/SrRuO3 MTJ. This incorporates a BaTiO3 barrier which can be found either in a non-ferroic or in a ferroelectric state. In such an MTJ not only can the tunneling magnetoresistance reach enormous values, but also, for certain voltages, its sign can be changed by altering the barrier electric state. These findings pave the way for a new generation of electrically-controlled magnetic sensors.

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