Large Bandgap Opening Between Graphene Dirac Cones Induced by Na Adsorption onto an Ir Superlattice

Details Large Bandgap Opening Between Graphene Dirac Cones Induced by Na Adsorption onto an Ir Superlattice Large Bandgap Opening Between Graphene Dirac Cones Induced by Na Adsorption onto an Ir Superlattice

2011-12-12

arxiv.org/abs/1112.2532v1

Physics

Condensed Matter

Materials Science

16 pages, 5 figures. To be published in ACS Nano

Scientific paper

10.1021/nn203841q

We investigate the effects of Na adsorption on the electronic structure of bare and Ir cluster superlattice covered epitaxial graphene on Ir(111) using angle-resolved photoemission spectroscopy and scanning tunneling microscopy. At Na saturation coverage a massive charge migration from sodium atoms to graphene raises the graphene Fermi level by about 1.4 eV relative to its neutrality point. We find that Na is adsorbed on top of the graphene layer and when coadsorbed onto an Ir cluster superlattice it results in the opening of a large bandgap of {\Delta} = 740 meV comparable to the one of Ge and with preserved high group velocity of the charge carriers.

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