Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Details Large area quasi-free standing monolayer graphene on 3C-SiC(111) Large area quasi-free standing monolayer graphene on 3C-SiC(111)

2011-09-28

arxiv.org/abs/1109.6240v1

Applied Physics Letters 99, 081904 (2011)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures, Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any

Scientific paper

10.1063/1.3618674

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6root3x6root3)R30-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy (ARPES) reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by X-ray photoemission spectroscopy (XPS) and low energy electron diffraction (LEED). Atomic force microscopy (AFM) and low energy electron microscopy (LEEM) demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers.

Affiliated with

Also associated with

No associations

Rating

Large area quasi-free standing monolayer graphene on 3C-SiC(111) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Large area quasi-free standing monolayer graphene on 3C-SiC(111), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Large area quasi-free standing monolayer graphene on 3C-SiC(111) will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-43914