Lande g-tensor in semiconductor nanostructures

Details Lande g-tensor in semiconductor nanostructures Lande g-tensor in semiconductor nanostructures

2006-04-25

arxiv.org/abs/cond-mat/0604578v3

Phys. Rev. Lett., 97, 236402 (2006).

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.97.236402

Understanding the electronic structure of semiconductor nanostructures is not complete without a detailed description of their corresponding spin-related properties. Here we explore the response of the shell structure of InAs self-assembled quantum dots to magnetic fields oriented in several directions, allowing the mapping of the g-tensor modulus for the s and p shells. We found that the g-tensors for the s and p shells show a very different behavior. The s-state in being more localized allows the probing of the confining potential details by sweeping the magnetic field orientation from the growth direction towards the in-plane direction. As for the p-state, we found that the g-tensor modulus is closer to that of the surrounding GaAs, consistent with a larger delocalization. These results reveal further details of the confining potentials of self-assembled quantum dots that have not yet been probed, in addition to the assessment of the g-tensor, which is of fundamental importance for the implementation of spin related applications.

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