Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3

Details Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3 Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3

2011-11-07

arxiv.org/abs/1111.1485v1

Phys. Rev. Lett. 108, 016401 (2012)

Physics

Condensed Matter

Materials Science

17 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.108.016401

We report the experimental observation of Landau quantization of molecular beam epitaxy grown Sb2Te3 thin films by a low-temperature scanning tunneling microscope. Different from all the reported systems, the Landau quantization in Sb2Te3 topological insulator is not sensitive to the intrinsic substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as 2D massless Dirac fermion system is achieved. We demonstrate that 4 quintuple layers are the thickness limit for Sb2Te3 thin film being a 3D topological insulator. The mechanism of the Landau level broadening is discussed in terms of enhanced quasiparticle lifetime.

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