Landau levels in deformed bilayer graphene at low magnetic fields

Details Landau levels in deformed bilayer graphene at low magnetic fields Landau levels in deformed bilayer graphene at low magnetic fields

2011-09-15

arxiv.org/abs/1109.3348v1

Solid State Communications 151, 1088 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

14 single-column pages, 5 figures, more details on material presented in arXiv:1104.5029

Scientific paper

10.1016/j.ssc.2011.05.019

We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor ff=+-4 being the most stable in the quantum Hall effect measurement, instead of ff=+-8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at ff=+-4 is, down to very low fields, weakly dependent on the strength of the magnetic field.

Affiliated with

Also associated with

No associations

Rating

Landau levels in deformed bilayer graphene at low magnetic fields does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Landau levels in deformed bilayer graphene at low magnetic fields, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Landau levels in deformed bilayer graphene at low magnetic fields will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-673476