Landau levels and magnetopolaron effect in dilute GaAs:N

Details Landau levels and magnetopolaron effect in dilute GaAs:N Landau levels and magnetopolaron effect in dilute GaAs:N

2010-05-09

arxiv.org/abs/1005.1412v1

Physics

Condensed Matter

Materials Science

Scientific paper

The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological Band Anticrossing Model (BAC) which we extended in order to include magnetic field and electron - phonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron energy.

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