Landau Levels and Band Bending in Few-Layer Epitaxial Graphene

Details Landau Levels and Band Bending in Few-Layer Epitaxial Graphene Landau Levels and Band Bending in Few-Layer Epitaxial Graphene

2011-01-12

arxiv.org/abs/1101.2454v2

Phys. Rev. B 83, 155430 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 10 figures

Scientific paper

10.1103/PhysRevB.83.155430

The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be altered by the presence of a scanning tunneling microscope (STM) tip used to probe top-layer electronic properties, and by a perpendicular magnetic field which induces well-defined Landau levels. Hartree approximation calculations in the perpendicular field case show that charge tends to rearrange between the layers so that the filling factors of most layers are pinned at integer values. We use our analysis to provide insight into the role of buried layers in recent few-layer-graphene STM studies and discuss the limitations of our model.

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