$L$-valley electron $g$ factor in bulk GaAs and AlAs

Details $L$-valley electron $g$ factor in bulk GaAs and AlAs $L$-valley electron $g$ factor in bulk GaAs and AlAs

2008-06-07

arxiv.org/abs/0806.1252v2

J. Appl. Phys. 104, 063719 (2008).

Physics

Condensed Matter

Materials Science

4 pages, 1 figure, To be published in J. App. Phys. 104, 2008

Scientific paper

10.1063/1.2986151

We study the Land\'e $g$-factor of conduction electrons in the $L$-valley of bulk GaAs and AlAs by using a three-band $\mathbf{k}\cdot\mathbf{p}$ model together with the tight-binding model. We find that the $L$-valley $g$-factor is highly anisotropic, and can be characterized by two components, $g_{\perp}$ and $g_{\|}$. $g_{\perp}$ is close to the free electron Land\'e factor but $g_{\|}$ is strongly affected by the remote bands. The contribution from remote bands on $g_{\|}$ depends on how the remote bands are treated. However, when the magnetic field is in the Voigt configuration, which is widely used in the experiments, different models give almost identical $g$-factor.

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