Kondo resonance in an ac driven quantum dot subjected to finite bias

Details Kondo resonance in an ac driven quantum dot subjected to finite bias Kondo resonance in an ac driven quantum dot subjected to finite bias

2008-04-24

arxiv.org/abs/0804.3967v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1016/j.ssc.2008.08.014

We employ the time-dependent non-crossing approximation to study the time averaged conductance for a single electron transistor in the Kondo regime when the dot level is sinusoidally driven from its equilibrium position by means of a gate voltage in finite bias. We find that the average conductance exhibits significant deviation from the monotonous reduction when the applied bias is equal to the driving frequency of the dot level. We investigate the effect of the temperature and the driving frequency on the observed enhancement. We attribute this behaviour to the overlap of the satellite Kondo peaks with the split Kondo resonances formed at each lead's Fermi level. We display the spectral function to put our interpretation into more rigorous footing.

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