Kondo Lattice Scenario in Disordered Semiconductor Heterostructures

Details Kondo Lattice Scenario in Disordered Semiconductor Heterostructures Kondo Lattice Scenario in Disordered Semiconductor Heterostructures

2009-03-23

arxiv.org/abs/0903.3612v2

Phys. Rev. Lett. 103, 067203 (2009)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 1 figure RevTeX, Published version, Added references

Scientific paper

10.1103/PhysRevLett.103.067203

We study nuclear relaxation in the presence of localized electrons in a two-dimensional electron gas in a disordered delta-doped semiconductor heterostructure and show that this method can reliably probe their magnetic interactions and possible long-range order. In contrast, we argue that transport measurements, the commonly employed tool, may not sometimes distinguish between spatial disorder and long-range order. We illustrate the utility of using the nuclear relaxation method to detect long-range order by analyzing a recent proposal made on the basis of transport measurements, on the spontaneous formation of a two-dimensional Kondo lattice in a 2D electron gas in a heterostructure.

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