Kondo Effect in Single Quantum Dot Systems --- Study with Numerical Renormalization Group Method ---

Details Kondo Effect in Single Quantum Dot Systems --- Study with Numerical Renormalization Group Method --- Kondo Effect in Single Quantum Dot Systems --- Study with Numerical Renormalization Group Method ---

1998-05-06

arxiv.org/abs/cond-mat/9805067v1

Physics

Condensed Matter

Strongly Correlated Electrons

22 pages, 18 figures, LaTeX, to be published in J. Phys. Soc. Jpn. Vol. 67 No. 7 (1998)

Scientific paper

10.1143/JPSJ.67.2444

The tunneling conductance is calculated as a function of the gate voltage in wide temperature range for the single quantum dot systems with Coulomb interaction. We assume that two orbitals are active for the tunneling process. We show that the Kondo temperature for each orbital channel can be largely different. The tunneling through the Kondo resonance almost fully develops in the region $T \lsim 0.1 T_{K}^{*} \sim 0.2 T_{K}^{*}$, where $T_{K}^{*}$ is the lowest Kondo temperature when the gate voltage is varied. At high temperatures the conductance changes to the usual Coulomb oscillations type. In the intermediate temperature region, the degree of the coherency of each orbital channel is different, so strange behaviors of the conductance can appear. For example, the conductance once increases and then decreases with temperature decreasing when it is suppressed at T=0 by the interference cancellation between different channels. The interaction effects in the quantum dot systems lead the sensitivities of the conductance to the temperature and to the gate voltage.

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