Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

Details Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

2007-11-14

arxiv.org/abs/0711.2124v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.2820445

Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B ~ 1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.

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