Kinetics of electric field induced oxygen ion migration in epitaxial metallic oxide films

Details Kinetics of electric field induced oxygen ion migration in epitaxial metallic oxide films Kinetics of electric field induced oxygen ion migration in epitaxial metallic oxide films

1998-11-26

arxiv.org/abs/cond-mat/9811377v1

Physics

Condensed Matter

Disordered Systems and Neural Networks

8 pages, 3 figures

Scientific paper

In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence associated with the processes (increase of resistance) show a streched exponential type dependence at lower temperature, which crosses over to a creep type behavior at $T \geq$ 350 K. The time scale associated shows a drastic drop in the magnitude at $T \approx$ 350 K, where a long range diffusion sets in increasing the conductivity noise. The phenomena is like a "glass-transition" in the random lattice of oxygen ions.

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