Kinetic step bunching during surface growth

Details Kinetic step bunching during surface growth Kinetic step bunching during surface growth

2005-02-09

arxiv.org/abs/cond-mat/0502227v1

Physics

Condensed Matter

Statistical Mechanics

4 pages, 6 figures, submitted to PRL

Scientific paper

10.1103/PhysRevLett.94.226102

We study the step bunching kinetic instability in a growing crystal surface characterized by anisotropic diffusion. The instability is due to the interplay between the elastic interactions and the alternation of step parameters. This instability is predicted to occur on a vicinal semiconductor surface Si(001) or Ge(001) during epitaxial growth. The maximal growth rate of the step bunching increases like $F^{4}$, where $F$ is the deposition flux. Our results are complemented with numerical simulations which reveals a coarsening behavior on the long time for the nonlinear step dynamics.

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