Kinetic stabilization of Fe film on (4 by 2)-GaAs(100)

Details Kinetic stabilization of Fe film on (4 by 2)-GaAs(100) Kinetic stabilization of Fe film on (4 by 2)-GaAs(100)

2006-02-10

arxiv.org/abs/cond-mat/0602270v1

Physics

Condensed Matter

Materials Science

4 figures

Scientific paper

10.1103/PhysRevB.75.125421

We grow Fe film on (4 by 2)-GaAs(100) at low temperature, (~ 130 K) and study their chemical structure by photoelectron spectroscopy using synchrotron radiation. We observe the effective suppression of As segregation and remarkable reduction of alloy formation near the interface between Fe and substrate. Hence, this should be a way to grow virtually pristine Fe film on GaAs(100). Further, the Fe film is found stable against As segregation even after warmed up to room temperature. There only forms very thin, ~ 8 angstrom thick interface alloy. It is speculated that the interface alloy forms via surface diffusion mediated by interface defects formed during the low temperature growth of the Fe film. Further out-diffusion of both Ga and As are suppressed because it should then proceed via inefficient bulk diffusion.

Affiliated with

Also associated with

No associations

Rating

Kinetic stabilization of Fe film on (4 by 2)-GaAs(100) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Kinetic stabilization of Fe film on (4 by 2)-GaAs(100), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Kinetic stabilization of Fe film on (4 by 2)-GaAs(100) will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-599963